Enhanced electron injection and stability in organic light-emitting devices using an ion beam assisted cathode
Identifieur interne : 000D54 ( Main/Repository ); précédent : 000D53; suivant : 000D55Enhanced electron injection and stability in organic light-emitting devices using an ion beam assisted cathode
Auteurs : RBID : Pascal:13-0108949Descripteurs français
- Pascal (Inist)
- Injection électron, Diode électroluminescente organique, Faisceau ionique, Bicouche, Diode électroluminescente, Cadmium, Seuil tension, Oxyde d'indium, Oxyde d'étain, Diamine, TDS, Fluorescence induite par laser, Méthode IBAD, Aluminium, Composé de l'aluminium, Dérivé de la quinoléine, Fluorure de lithium, Emission optique, Microstructure, Morphologie, Barrière diffusion, Durée vie, Couche mince, Microscopie force atomique, Microscopie RX, Densification, Injection porteur charge, Rendement quantique, Substrat aluminium, Substrat verre, 8560J, 8115J.
- Wicri :
English descriptors
- KwdEn :
- Aluminium, Aluminium compound, Atomic force microscopy, Bilayers, Cadmium, Charge carrier injection, Densification, Diamine, Diffusion barrier, Electron injection, Indium oxide, Ion beam, Ion beam assisted deposition method, Laser induced fluorescence, Lifetime, Light emission, Light emitting diode, Lithium fluoride, Microstructure, Morphology, Organic light emitting diodes, Quantum yield, Quinoline derivatives, TDS, Thin film, Tin oxide, Voltage threshold, X ray microscopy.
Abstract
In this article, we report a highly efficient bilayer OLED with a maximum luminance up to 62 000 cd/m2 and a threshold voltage of 3.8 V. The device structure is indium-tin-oxide (ITO)/N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. Ion beam assisted deposition (IBAD) process is used to deposit the aluminum cathode on the LiF layer. The IBAD process improves the OLED performance both by increasing the maximum luminance by a factor of 3 and by reducing the threshold voltage for light-emission. The IBAD process also enhances the microstructure and morphology of the Al layer and leads to denser and more homogeneous layers. The resulting highly-packed microstructure acts as a barrier to moisture and oxygen and inhibits their penetration into the Alq3 layer, leading to the OLED lifetime and stability increasing. In order to optimize the IBAD process parameters, prior to the OLED deposition, we have characterized aluminum films deposited on glass substrates by using atomic force microscopy and X-ray diffraction.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Enhanced electron injection and stability in organic light-emitting devices using an ion beam assisted cathode</title><author><name sortKey="Chakaroun, M" uniqKey="Chakaroun M">M. Chakaroun</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Lasers, UMR CNRS 7538, Université Paris 13</s1><s2>93430 Villetaneuse</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Villetaneuse</settlement></placeName><orgName type="university">Université Paris 13</orgName></affiliation></author><author><name sortKey="Antony, R" uniqKey="Antony R">R. Antony</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Xlim-MINACOM-UMR 6172, Facult des Sciences et Techniques, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Fischer, A P A" uniqKey="Fischer A">A. P. A. Fischer</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Lasers, UMR CNRS 7538, Université Paris 13</s1><s2>93430 Villetaneuse</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Villetaneuse</settlement></placeName><orgName type="university">Université Paris 13</orgName></affiliation></author><author><name sortKey="Ratier, B" uniqKey="Ratier B">B. Ratier</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Xlim-MINACOM-UMR 6172, Facult des Sciences et Techniques, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Moliton, A" uniqKey="Moliton A">A. Moliton</name><affiliation wicri:level="3"><inist:fA14 i1="02"><s1>Xlim-MINACOM-UMR 6172, Facult des Sciences et Techniques, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Limousin</region><settlement type="city">Limoges</settlement></placeName></affiliation></author><author><name sortKey="Lee, M W" uniqKey="Lee M">M. W. Lee</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Lasers, UMR CNRS 7538, Université Paris 13</s1><s2>93430 Villetaneuse</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Villetaneuse</settlement></placeName><orgName type="university">Université Paris 13</orgName></affiliation></author><author><name sortKey="Boudrioua, A" uniqKey="Boudrioua A">A. Boudrioua</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Laboratoire de Physique des Lasers, UMR CNRS 7538, Université Paris 13</s1><s2>93430 Villetaneuse</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Villetaneuse</settlement></placeName><orgName type="university">Université Paris 13</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0108949</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0108949 INIST</idno><idno type="RBID">Pascal:13-0108949</idno><idno type="wicri:Area/Main/Corpus">001175</idno><idno type="wicri:Area/Main/Repository">000D54</idno></publicationStmt><seriesStmt><idno type="ISSN">1293-2558</idno><title level="j" type="abbreviated">Solid state sci.</title><title level="j" type="main">Solid state sciences</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium</term><term>Aluminium compound</term><term>Atomic force microscopy</term><term>Bilayers</term><term>Cadmium</term><term>Charge carrier injection</term><term>Densification</term><term>Diamine</term><term>Diffusion barrier</term><term>Electron injection</term><term>Indium oxide</term><term>Ion beam</term><term>Ion beam assisted deposition method</term><term>Laser induced fluorescence</term><term>Lifetime</term><term>Light emission</term><term>Light emitting diode</term><term>Lithium fluoride</term><term>Microstructure</term><term>Morphology</term><term>Organic light emitting diodes</term><term>Quantum yield</term><term>Quinoline derivatives</term><term>TDS</term><term>Thin film</term><term>Tin oxide</term><term>Voltage threshold</term><term>X ray microscopy</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Injection électron</term><term>Diode électroluminescente organique</term><term>Faisceau ionique</term><term>Bicouche</term><term>Diode électroluminescente</term><term>Cadmium</term><term>Seuil tension</term><term>Oxyde d'indium</term><term>Oxyde d'étain</term><term>Diamine</term><term>TDS</term><term>Fluorescence induite par laser</term><term>Méthode IBAD</term><term>Aluminium</term><term>Composé de l'aluminium</term><term>Dérivé de la quinoléine</term><term>Fluorure de lithium</term><term>Emission optique</term><term>Microstructure</term><term>Morphologie</term><term>Barrière diffusion</term><term>Durée vie</term><term>Couche mince</term><term>Microscopie force atomique</term><term>Microscopie RX</term><term>Densification</term><term>Injection porteur charge</term><term>Rendement quantique</term><term>Substrat aluminium</term><term>Substrat verre</term><term>8560J</term><term>8115J</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cadmium</term><term>Aluminium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In this article, we report a highly efficient bilayer OLED with a maximum luminance up to 62 000 cd/m<sup>2</sup> and a threshold voltage of 3.8 V. The device structure is indium-tin-oxide (ITO)/N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. Ion beam assisted deposition (IBAD) process is used to deposit the aluminum cathode on the LiF layer. The IBAD process improves the OLED performance both by increasing the maximum luminance by a factor of 3 and by reducing the threshold voltage for light-emission. The IBAD process also enhances the microstructure and morphology of the Al layer and leads to denser and more homogeneous layers. The resulting highly-packed microstructure acts as a barrier to moisture and oxygen and inhibits their penetration into the Alq3 layer, leading to the OLED lifetime and stability increasing. In order to optimize the IBAD process parameters, prior to the OLED deposition, we have characterized aluminum films deposited on glass substrates by using atomic force microscopy and X-ray diffraction.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1293-2558</s0></fA01><fA03 i2="1"><s0>Solid state sci.</s0></fA03><fA05><s2>15</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Enhanced electron injection and stability in organic light-emitting devices using an ion beam assisted cathode</s1></fA08><fA11 i1="01" i2="1"><s1>CHAKAROUN (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>ANTONY (R.)</s1></fA11><fA11 i1="03" i2="1"><s1>FISCHER (A. P. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>RATIER (B.)</s1></fA11><fA11 i1="05" i2="1"><s1>MOLITON (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>LEE (M. W.)</s1></fA11><fA11 i1="07" i2="1"><s1>BOUDRIOUA (A.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Physique des Lasers, UMR CNRS 7538, Université Paris 13</s1><s2>93430 Villetaneuse</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Xlim-MINACOM-UMR 6172, Facult des Sciences et Techniques, 123 av. Albert Thomas</s1><s2>87060 Limoges</s2><s3>FRA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>84-90</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>11118</s2><s5>354000506394190140</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>34 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0108949</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solid state sciences</s0></fA64><fA66 i1="01"><s0>FRA</s0></fA66><fC01 i1="01" l="ENG"><s0>In this article, we report a highly efficient bilayer OLED with a maximum luminance up to 62 000 cd/m<sup>2</sup> and a threshold voltage of 3.8 V. The device structure is indium-tin-oxide (ITO)/N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD)/tris-(8-hydroxyquinoline) aluminum (Alq3)/LiF/Al. Ion beam assisted deposition (IBAD) process is used to deposit the aluminum cathode on the LiF layer. The IBAD process improves the OLED performance both by increasing the maximum luminance by a factor of 3 and by reducing the threshold voltage for light-emission. The IBAD process also enhances the microstructure and morphology of the Al layer and leads to denser and more homogeneous layers. The resulting highly-packed microstructure acts as a barrier to moisture and oxygen and inhibits their penetration into the Alq3 layer, leading to the OLED lifetime and stability increasing. In order to optimize the IBAD process parameters, prior to the OLED deposition, we have characterized aluminum films deposited on glass substrates by using atomic force microscopy and X-ray diffraction.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F15</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15J</s0></fC02><fC02 i1="03" i2="X"><s0>001D03C</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Injection électron</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Electron injection</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Inyección electrón</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Diode électroluminescente organique</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Organic light emitting diodes</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Faisceau ionique</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Ion beam</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Haz iónico</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" 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l="FRE"><s0>Injection porteur charge</s0><s5>38</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Charge carrier injection</s0><s5>38</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Inyección portador carga</s0><s5>38</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Rendement quantique</s0><s5>39</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Quantum yield</s0><s5>39</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Rendimiento quántico</s0><s5>39</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Substrat aluminium</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="31" i2="X" l="FRE"><s0>8560J</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="32" i2="X" l="FRE"><s0>8115J</s0><s4>INC</s4><s5>72</s5></fC03><fN21><s1>084</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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